Infineon IPD Type N-Channel MOSFET, 180 A, 75 V N, 3-Pin TO-252

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 2500 units)*

PHP219,850.00

(exc. VAT)

PHP246,225.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from May 25, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Reel*
2500 - 2500PHP87.94PHP219,850.00
5000 - 5000PHP87.762PHP219,405.00
7500 +PHP87.584PHP218,960.00

*price indicative

RS Stock No.:
244-9739
Mfr. Part No.:
IPD60R145CFD7ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

N

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon IPD60R145CFD7ATMA1 600V CoolMOS CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS 7 series. CoolMOS CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt Ruggedness

Lowest FOM RDS(on) x Qg and Eoss

Best-in-class RDS(on)/package combinations

Related links