Infineon IRFH Type N-Channel MOSFET, 11 A, 40 V, 8-Pin PQFN IRL100HS121
- RS Stock No.:
- 243-9301
- Mfr. Part No.:
- IRL100HS121
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP250.88
(exc. VAT)
PHP280.985
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 7,940 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP50.176 | PHP250.88 |
| 10 - 95 | PHP47.716 | PHP238.58 |
| 100 - 245 | PHP45.256 | PHP226.28 |
| 250 - 495 | PHP42.798 | PHP213.99 |
| 500 + | PHP40.338 | PHP201.69 |
*price indicative
- RS Stock No.:
- 243-9301
- Mfr. Part No.:
- IRL100HS121
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PQFN | |
| Series | IRFH | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PQFN | ||
Series IRFH | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon IRL100HS121 N-Channel Power MOSFET available in three different voltage classes (60V, 80V and 100V), Infineons new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving.
Lowest FOM (R DS(on) x Q g/gd)
Optimized Q g, C oss, and Q rr for fast switching
Logic level compatibility
Tiny PQFN 2x2mm package
Higher power density designs
Higher switching frequency
Uses OptiMOSTM5 Chip
Reduced parts count wherever 5V supplies are available
Driven directly from microcontrollers (slow switching)
System cost reductions
Related links
- Infineon IRFH Type N-Channel MOSFET 40 V, 8-Pin PQFN
- Infineon IRFH Type N-Channel MOSFET 40 V, 8-Pin PQFN IRL60HS118
- Infineon IRFH Type N-Channel MOSFET 40 V, 8-Pin PQFN
- Infineon IRFH Type N-Channel MOSFET 40 V, 8-Pin PQFN IRFH8324TRPBF
- Infineon IRFH Type N-Channel MOSFET 40 V, 8-Pin PQFN IRFH8318TRPBF
- Infineon IPA Type N-Channel MOSFET 40 V, 7-Pin TO-263
- Infineon IPA Type N-Channel MOSFET 40 V, 7-Pin TO-263 IRL40SC209
- Infineon OptiMOS 5 Type N-Channel MOSFET 80 V, 8-Pin PQFN
