Infineon HEXFET 2 Type P-Channel MOSFET, -3.4 A, -55 V, 8-Pin SOIC AUIRF7342QTR
- RS Stock No.:
- 243-9285
- Mfr. Part No.:
- AUIRF7342QTR
- Manufacturer:
- Infineon
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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 243-9285
- Mfr. Part No.:
- AUIRF7342QTR
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -3.4A | |
| Maximum Drain Source Voltage Vds | -55V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | -55V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -3.4A | ||
Maximum Drain Source Voltage Vds -55V | ||
Series HEXFET | ||
Package Type SOIC | ||
Pin Count 8 | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf -55V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Infineon AUIRF7342QTR N-Channel Power MOSFET specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual P Channel MOSFET
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free, RoHS Compliant