STMicroelectronics STW Type N-Channel MOSFET, 55 A, 30 V Enhancement, 4-Pin TO-247
- RS Stock No.:
- 240-0611
- Mfr. Part No.:
- STW75N65DM6-4
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 tray of 30 units)*
PHP36,761.76
(exc. VAT)
PHP41,173.17
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 30 unit(s) shipping from March 25, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tray* |
|---|---|---|
| 30 - 30 | PHP1,225.392 | PHP36,761.76 |
| 60 - 60 | PHP1,224.236 | PHP36,727.08 |
| 90 + | PHP1,223.081 | PHP36,692.43 |
*price indicative
- RS Stock No.:
- 240-0611
- Mfr. Part No.:
- STW75N65DM6-4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | STW | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 480W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 15.8 mm | |
| Height | 5.1mm | |
| Standards/Approvals | UL | |
| Length | 40.92mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series STW | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 480W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 15.8 mm | ||
Height 5.1mm | ||
Standards/Approvals UL | ||
Length 40.92mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Related links
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