Vishay Type N-Channel MOSFET, 218 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR626LEP-T1-RE3

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Subtotal (1 pack of 2 units)*

PHP363.66

(exc. VAT)

PHP407.30

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 48PHP181.83PHP363.66
50 - 98PHP176.375PHP352.75
100 - 248PHP165.795PHP331.59
250 - 998PHP150.88PHP301.76
1000 +PHP132.775PHP265.55

*price indicative

Packaging Options:
RS Stock No.:
239-8617
Mfr. Part No.:
SiDR626LEP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

218A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK SO-8DC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0021Ω

Channel Mode

Depletion

Maximum Power Dissipation Pd

120W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

46.1nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

125°C

Width

5.15 mm

Length

6.15mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 60 V and 175 °C temperature. This MOSFET used for solar micro inverter, motor drive switch and synchronous rectification.

Top side cooling feature provides additional venue for thermal transfer

Very low resistance

UIS tested

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