Vishay Type N-Channel MOSFET, 218 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR626LEP-T1-RE3

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Subtotal (1 pack of 2 units)*

PHP447.66

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PHP501.38

(inc. VAT)

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Per Unit
Per Pack*
2 - 48PHP223.83PHP447.66
50 - 98PHP217.115PHP434.23
100 - 248PHP204.09PHP408.18
250 - 998PHP185.73PHP371.46
1000 +PHP163.445PHP326.89

*price indicative

Packaging Options:
RS Stock No.:
239-8617
Mfr. Part No.:
SiDR626LEP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

218A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK SO-8DC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0021Ω

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

120W

Typical Gate Charge Qg @ Vgs

46.1nC

Maximum Operating Temperature

125°C

Standards/Approvals

No

Width

5.15 mm

Length

6.15mm

Automotive Standard

AEC-Q101

The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 60 V and 175 °C temperature. This MOSFET used for solar micro inverter, motor drive switch and synchronous rectification.

Top side cooling feature provides additional venue for thermal transfer

Very low resistance

UIS tested

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