- RS Stock No.:
- 236-8962
- Mfr. Part No.:
- VP0106N3-G
- Manufacturer:
- Microchip
140 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
Added
Price Each (In a Pack of 10)
PHP53.424
(exc. VAT)
PHP59.835
(inc. VAT)
Units | Per Unit | Per Pack* |
10 - 40 | PHP53.424 | PHP534.24 |
50 - 90 | PHP52.088 | PHP520.88 |
100 - 240 | PHP50.786 | PHP507.86 |
250 - 490 | PHP49.516 | PHP495.16 |
500 + | PHP48.278 | PHP482.78 |
*price indicative |
- RS Stock No.:
- 236-8962
- Mfr. Part No.:
- VP0106N3-G
- Manufacturer:
- Microchip
Technical data sheets
Legislation and Compliance
Product Details
The Microchip enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. The vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 250 mA |
Maximum Drain Source Voltage | 60 V |
Series | VP0106 |
Package Type | TO-92 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 8 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Number of Elements per Chip | 1 |