Toshiba Type P-Channel MOSFET, 6 A, 20 V, 3-Pin SOT-23

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Subtotal 100 units (supplied on a continuous strip)*

PHP832.00

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PHP932.00

(inc. VAT)

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100 - 200PHP8.32
250 - 450PHP8.147
500 - 950PHP7.991
1000 +PHP7.488

*price indicative

Packaging Options:
RS Stock No.:
236-3567P
Mfr. Part No.:
SSM3J328R,LF(T
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

88.4mΩ

Forward Voltage Vf

0.87V

Maximum Power Dissipation Pd

2W

Typical Gate Charge Qg @ Vgs

12.8nC

Maximum Gate Source Voltage Vgs

8 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

2.9 mm

Height

0.8mm

Length

2.4mm

Standards/Approvals

No

Automotive Standard

No

The Toshiba field effect transistor made up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.

Storage temperature range −55 to 150 °C