Infineon IST Type N-Channel MOSFET, 475 A, 40 V Enhancement, 5-Pin HSOF IST006N04NM6AUMA1

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Subtotal (1 reel of 2000 units)*

PHP227,562.00

(exc. VAT)

PHP254,870.00

(inc. VAT)

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Units
Per Unit
Per Reel*
2000 - 2000PHP113.781PHP227,562.00
4000 - 4000PHP108.092PHP216,184.00
6000 +PHP102.687PHP205,374.00

*price indicative

RS Stock No.:
235-0605
Mfr. Part No.:
IST006N04NM6AUMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

475A

Maximum Drain Source Voltage Vds

40V

Package Type

HSOF

Series

IST

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

0.6mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

178nC

Maximum Power Dissipation Pd

250W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Length

6.9mm

Width

2.4 mm

Height

7.2mm

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOSTM6 power transistor operated on 40V and drain current of 475A. It is in Stoll package features very low RDS(on) of 0.60mOhm. It has the advantages of Infineon’s well known quality level for robust industry packages making it the Ideal solution for various performance in battery powered applications, battery protection and battery formation.

Optimized for low voltage motor drives application

Optimized for battery power applications

Very low on-resistance RDS(on)

100% avalanche tested

Superior thermal performance

N-channel

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