Infineon Isolated F4 Type N-Channel MOSFET, 25 A, 1200 V, 2-Pin AG-EASY2B F445MR12W1M1B76BPSA1

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PHP8,394.56

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PHP9,401.91

(inc. VAT)

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1 - 4PHP8,394.56
5 - 9PHP8,227.15
10 - 14PHP8,062.31
15 - 19PHP7,901.30
20 +PHP7,742.83

*price indicative

Packaging Options:
RS Stock No.:
234-8968
Mfr. Part No.:
F445MR12W1M1B76BPSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

1200V

Series

F4

Package Type

AG-EASY2B

Pin Count

2

Maximum Drain Source Resistance Rds

45mΩ

Maximum Power Dissipation Pd

20mW

Typical Gate Charge Qg @ Vgs

0.062μC

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

15 V

Forward Voltage Vf

5.65V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Standards/Approvals

60749 and 60068, IEC 60747

Height

16.4mm

Width

33.8 mm

Length

62.8mm

Automotive Standard

No

The Infineon IGBT module has a 4 N-Channel (Half Bridge) FET Type works with 1200V Drain to Source Voltage and 75A continuous drain current.

Chassis mount

-40°C to 150°C operating temperature

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