Infineon IPTG Type N-Channel MOSFET, 108 A, 200 V Enhancement, 8-Pin HSOG IPTG111N20NM3FDATMA1

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PHP823.20

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PHP921.98

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2 - 8PHP411.60PHP823.20
10 - 98PHP403.37PHP806.74
100 - 248PHP395.42PHP790.84
250 - 498PHP387.47PHP774.94
500 +PHP379.525PHP759.05

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Packaging Options:
RS Stock No.:
233-4389
Mfr. Part No.:
IPTG111N20NM3FDATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

108A

Maximum Drain Source Voltage Vds

200V

Series

IPTG

Package Type

HSOG

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

63nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

375W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

8.75 mm

Height

2.4mm

Length

10.1mm

Automotive Standard

No

The Infineon OptiMOS power MOSFET IPTG111N20NM3FD comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 3 - 200 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board.

High efficiency and lower EMI

High performance capability

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