Infineon OptiMOS 5 Type N-Channel MOSFET, 66 A, 80 V, 8-Pin SO-8 ISC0602NLSATMA1

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Subtotal (1 pack of 5 units)*

PHP384.16

(exc. VAT)

PHP430.26

(inc. VAT)

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  • 4,995 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
5 - 5PHP76.832PHP384.16
10 - 95PHP72.992PHP364.96
100 - 245PHP69.378PHP346.89
250 - 495PHP65.876PHP329.38
500 +PHP62.60PHP313.00

*price indicative

Packaging Options:
RS Stock No.:
232-6749
Mfr. Part No.:
ISC0602NLSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

66A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

OptiMOS 5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9.5mΩ

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

60W

Typical Gate Charge Qg @ Vgs

22nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

5.35mm

Width

1.2 mm

Length

6.1mm

Standards/Approvals

No

Automotive Standard

No

The Infineon's OptiMOS PD power MOSFET 80 V, are designed targeting USB-PD and adapter applications. It's SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.

Logic level availability

Excellent thermal behaviour

100% avalanche tested

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