Infineon CoolSiC Type N-Channel MOSFET, 39 A, 650 V Enhancement, 3-Pin TO-247 IMW65R048M1HXKSA1
- RS Stock No.:
- 232-0391
- Mfr. Part No.:
- IMW65R048M1HXKSA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
PHP482.60
(exc. VAT)
PHP540.51
(inc. VAT)
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Temporarily out of stock
- Shipping from June 26, 2026
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Units | Per Unit |
|---|---|
| 1 - 4 | PHP482.60 |
| 5 - 9 | PHP472.99 |
| 10 - 14 | PHP463.38 |
| 15 - 19 | PHP454.10 |
| 20 + | PHP445.18 |
*price indicative
- RS Stock No.:
- 232-0391
- Mfr. Part No.:
- IMW65R048M1HXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 39A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolSiC | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 64mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 39A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolSiC | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 64mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon has SiC MOSFET delivering reliable and cost-effective performance in TO247 3-pin package. The CoolSiC MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. The MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation.
Low capacitances
Optimized switching behaviour at higher currents
Superior gate oxide reliability
Excellent thermal behaviour
Increased avalanche capability
Works with standard drivers
Related links
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247 IMZA65R048M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247