STMicroelectronics SCTW Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 4-Pin Hip-247

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Subtotal 10 units (supplied in a tube)*

PHP20,746.90

(exc. VAT)

PHP23,236.50

(inc. VAT)

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  • Shipping from April 23, 2027
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Units
Per Unit
10 - 99PHP2,074.69
100 - 249PHP2,033.18
250 - 499PHP1,992.52
500 +PHP1,952.66

*price indicative

Packaging Options:
RS Stock No.:
230-0094P
Mfr. Part No.:
SCTWA60N120G2-4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Series

SCTW

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Forward Voltage Vf

3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

22nC

Maximum Power Dissipation Pd

388W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

21.1mm

Length

15.9mm

Automotive Standard

No

The STMicroelectronics SCTWA60N is silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Source sensing pin for increased efficiency

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