STMicroelectronics SCTW Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 4-Pin Hip-247
- RS Stock No.:
- 230-0094P
- Mfr. Part No.:
- SCTWA60N120G2-4
- Manufacturer:
- STMicroelectronics
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Subtotal 10 units (supplied in a tube)*
PHP19,684.30
(exc. VAT)
PHP22,046.40
(inc. VAT)
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- Shipping from October 08, 2026
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Units | Per Unit |
|---|---|
| 10 - 99 | PHP1,968.43 |
| 100 - 249 | PHP1,929.05 |
| 250 - 499 | PHP1,890.47 |
| 500 + | PHP1,852.65 |
*price indicative
- RS Stock No.:
- 230-0094P
- Mfr. Part No.:
- SCTWA60N120G2-4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCTW | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3V | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 388W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 5.1 mm | |
| Height | 21.1mm | |
| Length | 15.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCTW | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3V | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 388W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 5.1 mm | ||
Height 21.1mm | ||
Length 15.9mm | ||
Automotive Standard No | ||
The STMicroelectronics SCTWA60N is silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency