onsemi SUPERFET III Type N-Channel MOSFET, 24 A, 650 V N, 8-Pin TDFN NTMT125N65S3H
- RS Stock No.:
- 229-6480
- Mfr. Part No.:
- NTMT125N65S3H
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP793.44
(exc. VAT)
PHP888.66
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 3,000 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP396.72 | PHP793.44 |
| 10 - 98 | PHP384.815 | PHP769.63 |
| 100 - 248 | PHP372.91 | PHP745.82 |
| 250 - 498 | PHP364.975 | PHP729.95 |
| 500 + | PHP357.045 | PHP714.09 |
*price indicative
- RS Stock No.:
- 229-6480
- Mfr. Part No.:
- NTMT125N65S3H
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SUPERFET III | |
| Package Type | TDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 171W | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 8.1mm | |
| Height | 8.1mm | |
| Width | 1.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SUPERFET III | ||
Package Type TDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 171W | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 8.1mm | ||
Height 8.1mm | ||
Width 1.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor SUPER FET series is brand new high voltage super junction MOSFET that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Low effective output capacitance
100% avalanche tested
Higher system reliability at low temperature operation
Pb−free
RoHS compliant
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