Vishay TrenchFET Type N-Channel MOSFET, 150 A, 200 V Enhancement, 3-Pin TO-263 SUM90100E-GE3

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Subtotal (1 pack of 2 units)*

PHP469.66

(exc. VAT)

PHP526.02

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 8PHP234.83PHP469.66
10 - 48PHP211.845PHP423.69
50 - 98PHP199.315PHP398.63
100 - 248PHP173.825PHP347.65
250 +PHP170.485PHP340.97

*price indicative

Packaging Options:
RS Stock No.:
228-2987
Mfr. Part No.:
SUM90100E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

150A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-263

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

375W

Typical Gate Charge Qg @ Vgs

72.8nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.8V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 200-V (D-S) MOSFET.

100 % Rg and UIS tested

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