Vishay TrenchFET Type N-Channel MOSFET, 201 A, 25 V Enhancement, 4-Pin SO-8 SiJA22DP-T1-GE3

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Subtotal (1 pack of 5 units)*

PHP266.00

(exc. VAT)

PHP297.90

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 45PHP53.20PHP266.00
50 - 95PHP51.604PHP258.02
100 - 245PHP49.54PHP247.70
250 - 995PHP47.062PHP235.31
1000 +PHP44.238PHP221.19

*price indicative

Packaging Options:
RS Stock No.:
228-2890
Mfr. Part No.:
SiJA22DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

201A

Maximum Drain Source Voltage Vds

25V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.74mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

48W

Typical Gate Charge Qg @ Vgs

83nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 25 V MOSFET.

100 % Rg and UIS tested