Infineon IPB60R Type N-Channel MOSFET, 22 A, 600 V Enhancement, 3-Pin TO-263 IPB60R099C7ATMA1

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Subtotal (1 pack of 2 units)*

PHP639.74

(exc. VAT)

PHP716.50

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 8PHP319.87PHP639.74
10 - 98PHP293.42PHP586.84
100 - 248PHP270.575PHP541.15
250 - 498PHP251.33PHP502.66
500 +PHP244.72PHP489.44

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Packaging Options:
RS Stock No.:
222-4893
Mfr. Part No.:
IPB60R099C7ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

22A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

IPB60R

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

99mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Reduced switching loss parameters such as Q G, C oss, E oss

Best-in-class figure of merit Q G*R DS(on)

Increased switching frequency

Best R (on)*A in the world

Rugged body diode

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