Infineon IMBF1 Type N-Channel MOSFET, 7.4 A, 1700 V Enhancement, 7-Pin TO-263 IMBF170R650M1XTMA1

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Subtotal (1 pack of 2 units)*

PHP603.68

(exc. VAT)

PHP676.12

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 8PHP301.84PHP603.68
10 - 98PHP276.725PHP553.45
100 - 248PHP255.315PHP510.63
250 - 498PHP237.19PHP474.38
500 +PHP230.60PHP461.20

*price indicative

Packaging Options:
RS Stock No.:
222-4851
Mfr. Part No.:
IMBF170R650M1XTMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

7.4A

Maximum Drain Source Voltage Vds

1700V

Series

IMBF1

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

650mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.

Optimized for fly-back topologies

Extremely low switching loss

12 V / 0 V gate-source voltage compatible with fly-back controllers

Fully controllable dV/dt for EMI optimization

SMD package with enhanced creepage and clearance distances, > 7 mm

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