Infineon HEXFET Type N-Channel MOSFET, 56 A, 55 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 222-4750
- Mfr. Part No.:
- IRFR2405TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2000 units)*
PHP67,424.00
(exc. VAT)
PHP75,514.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from March 16, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 2000 - 2000 | PHP33.712 | PHP67,424.00 |
| 4000 - 4000 | PHP32.701 | PHP65,402.00 |
| 6000 + | PHP31.72 | PHP63,440.00 |
*price indicative
- RS Stock No.:
- 222-4750
- Mfr. Part No.:
- IRFR2405TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160kΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.39 mm | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160kΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 2.39 mm | ||
Length 6.73mm | ||
Height 6.22mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of HEXFET® Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Related links
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IRFR2405TRPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-252 IRFR2405TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET & Diode 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET & Diode 55 V Enhancement, 3-Pin TO-252