Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-263 IRF3205ZSTRLPBF

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Subtotal (1 pack of 10 units)*

PHP600.40

(exc. VAT)

PHP672.40

(inc. VAT)

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  • 1,060 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
10 - 10PHP60.04PHP600.40
20 - 90PHP55.099PHP550.99
100 - 240PHP50.804PHP508.04
250 - 490PHP47.26PHP472.60
500 +PHP45.864PHP458.64

*price indicative

Packaging Options:
RS Stock No.:
222-4735
Mfr. Part No.:
IRF3205ZSTRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

76nC

Maximum Power Dissipation Pd

170W

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Standards/Approvals

No

Height

4.83mm

Length

10.67mm

Width

9.65 mm

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Advanced process technology

Ultra-low on-resistance Fast switching

Lead-Free, RoHS Compliant

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