Silicon N-Channel MOSFET, 11 A, 55 V, 3-Pin DPAK Infineon AUIRFR9024NTRL

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced process technology
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant

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