DiodesZetex DMT Type N-Channel MOSFET, 16.1 A, 60 V Enhancement, 8-Pin VDFN DMT64M8LCG-7
- RS Stock No.:
- 222-2881
- Mfr. Part No.:
- DMT64M8LCG-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP513.23
(exc. VAT)
PHP574.82
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 1,620 unit(s) shipping from December 29, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP51.323 | PHP513.23 |
| 50 - 90 | PHP49.784 | PHP497.84 |
| 100 - 240 | PHP48.29 | PHP482.90 |
| 250 - 990 | PHP46.843 | PHP468.43 |
| 1000 + | PHP45.439 | PHP454.39 |
*price indicative
- RS Stock No.:
- 222-2881
- Mfr. Part No.:
- DMT64M8LCG-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | VDFN | |
| Series | DMT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.16W | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Typical Gate Charge Qg @ Vgs | 47.5nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 3.3mm | |
| Length | 3.3mm | |
| Width | 0.8 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type VDFN | ||
Series DMT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.16W | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Typical Gate Charge Qg @ Vgs 47.5nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 3.3mm | ||
Length 3.3mm | ||
Width 0.8 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and load switch.
High Conversion Efficiency
Low RDS(ON)—Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Related links
- DiodesZetex DMT Type N-Channel MOSFET 60 V Enhancement, 8-Pin VDFN
- DiodesZetex Dual DMT Type N-Channel MOSFET 30 V Enhancement, 8-Pin VDFN-3030
- DiodesZetex Dual DMT Type N-Channel MOSFET 30 V Enhancement, 8-Pin VDFN-3030 DMT3009UDT-7
- DiodesZetex DMT Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerDI5060
- DiodesZetex DMT Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI3333
- DiodesZetex DMT Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI3333
- DiodesZetex DMT Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI3333
- DiodesZetex DMT Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI3333 DMT6015LFVW-7