DiodesZetex Dual DMT Type N-Channel MOSFET, 26.5 A, 40 V Enhancement, 8-Pin PowerDI3333-8
- RS Stock No.:
- 222-2872
- Mfr. Part No.:
- DMT4014LDV-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 222-2872
- Mfr. Part No.:
- DMT4014LDV-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26.5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerDI3333-8 | |
| Series | DMT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.019Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 5.7nC | |
| Maximum Power Dissipation Pd | 2.1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26.5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerDI3333-8 | ||
Series DMT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.019Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 5.7nC | ||
Maximum Power Dissipation Pd 2.1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low RDS(ON) — Ensures On-State Losses Are Minimized
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Related links
- DiodesZetex Dual DMT Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerDI3333-8 DMT4014LDV-7
- DiodesZetex Dual DMT Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerDI3333-8
- DiodesZetex Dual DMT Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerDI3333-8 DMT4015LDV-7
- DiodesZetex Dual DMT Type N-Channel MOSFET 30 V Enhancement, 8-Pin VDFN-3030
- DiodesZetex Dual DMT Type N-Channel MOSFET 30 V Enhancement, 8-Pin VDFN-3030 DMT3009UDT-7
- DiodesZetex Dual DMT Type N-Channel MOSFET 30 V Enhancement, 6-Pin UDFN-2020
- DiodesZetex Dual DMT Type N-Channel MOSFET 30 V Enhancement, 6-Pin UDFN-2020 DMT3020LFDBQ-7
- DiodesZetex DMT Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI3333
