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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	650V
	Series	NXV65HR
	Package Type	APMCA-A16
	Mount Type	Through Hole
	Pin Count	16
	Maximum Drain Source Resistance Rds	0.082Ω
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	128W
	Transistor Configuration	Half Bridge
	Maximum Operating Temperature	150°C
	Length	40.3mm
	Width	22.1 mm
	Height	4.7mm
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 650V
	Series NXV65HR
	Package Type APMCA-A16
	Mount Type Through Hole
	Pin Count 16
	Maximum Drain Source Resistance Rds 0.082Ω
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 128W
	Transistor Configuration Half Bridge
	Maximum Operating Temperature 150°C
	Length 40.3mm
	Width 22.1 mm
	Height 4.7mm
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - NXV65HR82DS2

The ON Semiconductor on-board charger H-bridge in APM16 series for LLC and phase-shifted DC-DC converter. It enable design of small, efficient and reliable system for reduced vehicle fuel consumption and CO2 emissions. It has 82mΩ superFET3 H-bridge on Al²O³ DBC substrate with 5 kV isolation in a compact APM16 transfer molded module.

5 kV/1 s electrically isolated substrate for easy assembly

Compact design for low total module resistance

Module serialization for full traceability

onsemi Half Bridge NXV65HR Type N-Channel MOSFET, 26 A, 650 V, 16-Pin APMCA-A16

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