onsemi NTBGS3D Type N-Channel MOSFET, 127 A, 60 V Enhancement, 7-Pin TO-263
- RS Stock No.:
- 221-6703
- Mfr. Part No.:
- NTBGS3D5N06C
- Manufacturer:
- onsemi
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 221-6703
- Mfr. Part No.:
- NTBGS3D5N06C
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 127A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | NTBGS3D | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 3.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 115W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 4.7 mm | |
| Length | 10.2mm | |
| Height | 15.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 127A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series NTBGS3D | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 3.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 115W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 4.7 mm | ||
Length 10.2mm | ||
Height 15.7mm | ||
Automotive Standard No | ||
The ON Semiconductor 60V of power MOSFET used 127A of drain current with single N−channel. It has lower switching noise/EMI and minimize conduction losses.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
Related links
- onsemi NTBGS3D Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263 NTBGS3D5N06C
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRFS4310ZTRLPBF
- Infineon AUIRFS Type N-Channel MOSFET 100 V, 3-Pin TO-263
- Infineon AUIRFS Type N-Channel MOSFET 100 V, 3-Pin TO-263 AUIRFS4310ZTRL
- onsemi NTBGS1D Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- onsemi NVB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263