Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 9.4 A, 700 V Enhancement, 3-Pin TO-251

RS Stock No.:: 220-7442
Mfr. Part No.:: IPSA70R1K2P7SAKMA1
Manufacturer:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 9.4 A, 700 V Enhancement, 3-Pin TO-251

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Bulk discount available

Subtotal (1 tube of 75 units)*

PHP1,955.10

(exc. VAT)

PHP2,189.70

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

1,425 unit(s) ready to ship from another location

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Units	Per Unit	Per Tube*
75 - 150	PHP26.068	PHP1,955.10
225 - 300	PHP25.286	PHP1,896.45
375 +	PHP24.527	PHP1,839.53

*price indicative

RS Stock No.:: 220-7442
Mfr. Part No.:: IPSA70R1K2P7SAKMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	9.4A
	Maximum Drain Source Voltage Vds	700V
	Package Type	TO-251
	Series	CoolMOS P7
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.2Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	25W
	Maximum Gate Source Voltage Vgs	16 V
	Typical Gate Charge Qg @ Vgs	4.8nC
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	6.6mm
	Height	6.1mm
	Width	2.38 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 9.4A
	Maximum Drain Source Voltage Vds 700V
	Package Type TO-251
	Series CoolMOS P7
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.2Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 25W
	Maximum Gate Source Voltage Vgs 16 V
	Typical Gate Charge Qg @ Vgs 4.8nC
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 6.6mm
	Height 6.1mm
	Width 2.38 mm
	Automotive Standard No

Datasheet - IPSA70R1K2P7SAKMA1

The Infineon has developed he 700V Cool MOS P7 super junction MOSFET series to serve today’s and especially tomorrow’s trends in fly back topologies. It addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to super junction technologies used today. By combining customers’ feedback with over 20 years of super junction MOSFET experience, 700V Cool MOS P7 enables best fit for target applications in terms of:

Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off

Highly performant technology

Low switching losses (E oss)

Highly efficient

Excellent thermal behaviour

Allowing high speed switching

Integrated protection Zener diode

Optimized V (GS)the of 3V with very narrow tolerance of ±0.5V

Finely graduated portfolio

Cost competitive technology

Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology

Further efficiency gain at higher switching speed

Supporting less magnetic size with lower BOM costs

High ESD ruggedness up to HBM Class 2 level

Easy to drive and design-in

Enabler for smaller form factors and high power density designs

Excellent choice in selecting the best fitting product

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 9.4 A, 700 V Enhancement, 3-Pin TO-251

FREE delivery for orders over ₱3,000.00

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