STMicroelectronics SCTH40N Type N-Channel MOSFET, 33 A, 1200 V Enhancement, 7-Pin H2PAK
- RS Stock No.:
- 219-4221
- Mfr. Part No.:
- SCTH40N120G2V-7
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 219-4221
- Mfr. Part No.:
- SCTH40N120G2V-7
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK | |
| Series | SCTH40N | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 105mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.8 mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 15.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK | ||
Series SCTH40N | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 105mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 175°C | ||
Width 4.8 mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 15.25mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
AEC-Q101 qualified
Very high operating junction temperature capability (TJ = 175 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Related links
- STMicroelectronics SCTH40N Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK SCTH40N120G2V-7
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7 SCT040H120G3AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3-7
- STMicroelectronics SCTH90 Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK SCTH35N65G2V-7AG
- STMicroelectronics SCT025H120G3AG Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG