Infineon IAUA Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin PG-HSOF-5 IAUA200N04S5N010AUMA1
- RS Stock No.:
- 218-2988
- Mfr. Part No.:
- IAUA200N04S5N010AUMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP570.48
(exc. VAT)
PHP638.94
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,805 unit(s) ready to ship from another location
- Plus 2,000 unit(s) shipping from June 25, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP114.096 | PHP570.48 |
| 10 - 95 | PHP104.706 | PHP523.53 |
| 100 - 245 | PHP96.612 | PHP483.06 |
| 250 - 495 | PHP89.656 | PHP448.28 |
| 500 + | PHP87.228 | PHP436.14 |
*price indicative
- RS Stock No.:
- 218-2988
- Mfr. Part No.:
- IAUA200N04S5N010AUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PG-HSOF-5 | |
| Series | IAUA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PG-HSOF-5 | ||
Series IAUA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™-5 series N-channel power MOSFET. It is used for automotive applications.
N-channel - Enhancement mode - Normal Level
MSL3 up to 260°C peak reflow
175°C operating temperature
100% Avalanche tested
Related links
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