Infineon CoolMOS C3 Type N-Channel MOSFET, 4 A, 800 V, 3-Pin TO-252 SPD04N80C3ATMA1
- RS Stock No.:
- 217-2644
- Mfr. Part No.:
- SPD04N80C3ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP520.84
(exc. VAT)
PHP583.34
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 900 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP52.084 | PHP520.84 |
| 20 - 90 | PHP47.765 | PHP477.65 |
| 100 - 240 | PHP44.098 | PHP440.98 |
| 250 - 490 | PHP40.918 | PHP409.18 |
| 500 + | PHP39.777 | PHP397.77 |
*price indicative
- RS Stock No.:
- 217-2644
- Mfr. Part No.:
- SPD04N80C3ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Series | CoolMOS C3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.3Ω | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Power Dissipation Pd | 63W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.41 mm | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Standards/Approvals | JEDEC, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Series CoolMOS C3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.3Ω | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Power Dissipation Pd 63W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 2.41 mm | ||
Height 6.22mm | ||
Length 6.73mm | ||
Standards/Approvals JEDEC, RoHS | ||
Automotive Standard No | ||
The Infineon 800V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio. .
Low specific on-state resistance (RDS(on)*A)
Very low energy storage in output capacitance (Eoss) @400V
Low gate charge (Qg)
Field proven CoolMOS™ quality
CoolMOS™ technology has been manufactured by Infineon since 1998
Related links
- Infineon CoolMOS C3 Type N-Channel MOSFET 800 V, 3-Pin TO-252
- Infineon CoolMOS C3 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C3 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 SPP04N80C3XKSA1
- Infineon CoolMOS C3 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C3 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C3 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C3 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C3 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220