Infineon IPZ Type N-Channel MOSFET, 40 A, 40 V Enhancement, 8-Pin PQFN IPZ40N04S58R4ATMA1
- RS Stock No.:
- 217-2589
- Mfr. Part No.:
- IPZ40N04S58R4ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP768.24
(exc. VAT)
PHP860.42
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 14,900 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP38.412 | PHP768.24 |
| 40 - 80 | PHP35.231 | PHP704.62 |
| 100 - 220 | PHP32.521 | PHP650.42 |
| 240 - 480 | PHP30.164 | PHP603.28 |
| 500 + | PHP29.34 | PHP586.80 |
*price indicative
- RS Stock No.:
- 217-2589
- Mfr. Part No.:
- IPZ40N04S58R4ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPZ | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 34W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13.7nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPZ | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 34W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13.7nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 40V, N-Ch, 8.4 mΩ max, Automotive MOSFET, S3O8, OptiMOS™-5.
OptiMOS™ - power MOSFET for automotive applications
N-channel - Enhancement mode - Normal Level
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
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