Infineon CoolMOS C7 Type N-Channel MOSFET, 40 A, 600 V Enhancement, 3-Pin TO-247 IPW60R080P7XKSA1
- RS Stock No.:
- 215-2568
- Mfr. Part No.:
- IPW60R080P7XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 pack of 5 units)*
PHP1,496.73
(exc. VAT)
PHP1,676.34
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 90 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP299.346 | PHP1,496.73 |
| 10 - 95 | PHP274.416 | PHP1,372.08 |
| 100 - 245 | PHP253.272 | PHP1,266.36 |
| 250 - 495 | PHP235.246 | PHP1,176.23 |
| 500 + | PHP228.792 | PHP1,143.96 |
*price indicative
- RS Stock No.:
- 215-2568
- Mfr. Part No.:
- IPW60R080P7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS C7 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 129W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS C7 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 129W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS™ P7 is the successor to the 600V Cool MOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS™ 7th generation platform ensure its high efficiency. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching application seven more efficient, more compact and much cooler.
Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Excellent ESD robustness >2kV(HBM) for all products
Significant reduction of switching and conduction losses
Wide portfolio in through hole and surface mount packages
Related links
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- Infineon CoolMOS C7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247