Infineon OptiMOS-T2 Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-220 IPP80N06S407AKSA2

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Subtotal (1 pack of 10 units)*

PHP1,188.76

(exc. VAT)

PHP1,331.41

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 10PHP118.876PHP1,188.76
20 - 90PHP115.905PHP1,159.05
100 - 240PHP113.008PHP1,130.08
250 - 490PHP110.183PHP1,101.83
500 +PHP107.427PHP1,074.27

*price indicative

Packaging Options:
RS Stock No.:
215-2548
Mfr. Part No.:
IPP80N06S407AKSA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220

Series

OptiMOS-T2

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

7.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

56nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

79W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS® -T2 Power-Transistor series has 60V maximum drain source voltage with TO-220 package type. It is N-Channel with 7.1 mΩ max maximum drain source resistance.

N-channel - Enhancement mode

AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

100% Avalanche tested

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