Infineon CoolMOS CE Type N-Channel MOSFET, 37 A, 500 V Enhancement, 3-Pin TO-220 IPA60R080P7XKSA1
- RS Stock No.:
- 215-2477
- Mfr. Part No.:
- IPA60R080P7XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP1,331.90
(exc. VAT)
PHP1,491.75
(inc. VAT)
FREE delivery for orders over ₱3,000.00
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- Shipping from October 05, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP266.38 | PHP1,331.90 |
| 10 - 95 | PHP244.202 | PHP1,221.01 |
| 100 - 245 | PHP225.528 | PHP1,127.64 |
| 250 - 495 | PHP209.414 | PHP1,047.07 |
| 500 + | PHP203.58 | PHP1,017.90 |
*price indicative
- RS Stock No.:
- 215-2477
- Mfr. Part No.:
- IPA60R080P7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220 | |
| Series | CoolMOS CE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 29W | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220 | ||
Series CoolMOS CE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 29W | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS™ P7 is the successor to the 600V Cool MOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS™ 7th generation platform ensure its high efficiency. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching application seven more efficient, more compact and much cooler.
Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Excellent ESD robustness >2kV(HBM) for all products
Significant reduction of switching and conduction losses
Wide portfolio in through hole and surface mount packages
Related links
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