Infineon OptiMOS Type N-Channel MOSFET, 13 A, 34 V Enhancement, 8-Pin TDSON BSC0996NSATMA1
- RS Stock No.:
- 214-8979
- Mfr. Part No.:
- BSC0996NSATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
PHP2,226.20
(exc. VAT)
PHP2,493.35
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from January 30, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 50 | PHP44.524 | PHP2,226.20 |
| 100 - 100 | PHP40.831 | PHP2,041.55 |
| 150 - 200 | PHP37.677 | PHP1,883.85 |
| 250 - 450 | PHP34.98 | PHP1,749.00 |
| 500 + | PHP34.026 | PHP1,701.30 |
*price indicative
- RS Stock No.:
- 214-8979
- Mfr. Part No.:
- BSC0996NSATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 34V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.2nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Width | 6.35 mm | |
| Standards/Approvals | No | |
| Length | 5.49mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 34V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.2nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Width 6.35 mm | ||
Standards/Approvals No | ||
Length 5.49mm | ||
Automotive Standard No | ||
The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
It comes with Improved switching behaviour
100% Avalanche tested
Related links
- Infineon OptiMOS Type N-Channel MOSFET 34 V Enhancement, 8-Pin TDSON
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- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON