Infineon HEXFET Type N-Channel MOSFET, 200 A, 40 V, 3-Pin TO-263 IRL1404ZSTRLPBF
- RS Stock No.:
- 214-4468
- Distrelec Article No.:
- 304-39-425
- Mfr. Part No.:
- IRL1404ZSTRLPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP870.24
(exc. VAT)
PHP974.67
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 6,250 unit(s) shipping from January 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP87.024 | PHP870.24 |
| 20 - 90 | PHP79.833 | PHP798.33 |
| 100 - 240 | PHP73.718 | PHP737.18 |
| 250 - 490 | PHP68.445 | PHP684.45 |
| 500 + | PHP66.527 | PHP665.27 |
*price indicative
- RS Stock No.:
- 214-4468
- Distrelec Article No.:
- 304-39-425
- Mfr. Part No.:
- IRL1404ZSTRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 200A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.9mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Power Dissipation Pd | 230W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 200A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.9mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Power Dissipation Pd 230W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
It is lead-free
Related links
- Infineon HEXFET Type N-Channel MOSFET 40 V, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220 IRL1404ZPBF
- Infineon HEXFET Type N-Channel MOSFET 40 V, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V, 3-Pin TO-263