Infineon OptiMOS 3 Type N-Channel MOSFET, 96 A, 200 V Enhancement, 8-Pin HSOF IPT111N20NFDATMA1
- RS Stock No.:
- 214-4424
- Mfr. Part No.:
- IPT111N20NFDATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP998.44
(exc. VAT)
PHP1,118.26
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 1,172 unit(s) shipping from December 26, 2025
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP499.22 | PHP998.44 |
| 10 - 98 | PHP457.845 | PHP915.69 |
| 100 - 248 | PHP422.26 | PHP844.52 |
| 250 - 498 | PHP392.52 | PHP785.04 |
| 500 + | PHP381.525 | PHP763.05 |
*price indicative
- RS Stock No.:
- 214-4424
- Mfr. Part No.:
- IPT111N20NFDATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 96A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | HSOF | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 10.58 mm | |
| Length | 10.1mm | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 96A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type HSOF | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 10.58 mm | ||
Length 10.1mm | ||
Height 2.4mm | ||
Automotive Standard No | ||
This Infineon OptiMOS 3 MOSFET is perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.
It is RoHS compliant
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