Infineon OptiMOS 3 Type N-Channel MOSFET, 96 A, 200 V Enhancement, 8-Pin HSOF IPT111N20NFDATMA1

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Subtotal (1 pack of 2 units)*

PHP998.44

(exc. VAT)

PHP1,118.26

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 8PHP499.22PHP998.44
10 - 98PHP457.845PHP915.69
100 - 248PHP422.26PHP844.52
250 - 498PHP392.52PHP785.04
500 +PHP381.525PHP763.05

*price indicative

Packaging Options:
RS Stock No.:
214-4424
Mfr. Part No.:
IPT111N20NFDATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

96A

Maximum Drain Source Voltage Vds

200V

Package Type

HSOF

Series

OptiMOS 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

65nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

10.58 mm

Length

10.1mm

Height

2.4mm

Automotive Standard

No

This Infineon OptiMOS 3 MOSFET is perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.

It is RoHS compliant

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