Infineon OptiMOS-T Type N-Channel MOSFET, 70 A, 120 V Enhancement, 3-Pin TO-252 IPD70N12S311ATMA1

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Subtotal (1 pack of 10 units)*

PHP980.78

(exc. VAT)

PHP1,098.47

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 10PHP98.078PHP980.78
20 - 90PHP89.925PHP899.25
100 - 240PHP83.071PHP830.71
250 - 490PHP77.041PHP770.41
500 +PHP74.914PHP749.14

*price indicative

Packaging Options:
RS Stock No.:
214-4390
Mfr. Part No.:
IPD70N12S311ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

120V

Series

OptiMOS-T

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

51nC

Maximum Power Dissipation Pd

125W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.65mm

Height

2.35mm

Automotive Standard

AEC-Q101

This Infineon OptiMOS MOSFET is suitable for automotive applications and it is 100% Avalanche tested.

It is Halogen-free according to IEC61249-2-21

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