STMicroelectronics Type N-Channel MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-252 STD12N60DM6
- RS Stock No.:
- 210-8740
- Mfr. Part No.:
- STD12N60DM6
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP599.76
(exc. VAT)
PHP671.73
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from April 27, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP119.952 | PHP599.76 |
| 50 - 95 | PHP117.554 | PHP587.77 |
| 100 - 245 | PHP115.202 | PHP576.01 |
| 250 - 995 | PHP112.898 | PHP564.49 |
| 1000 + | PHP110.638 | PHP553.19 |
*price indicative
- RS Stock No.:
- 210-8740
- Mfr. Part No.:
- STD12N60DM6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 390mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 90W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Height | 2.4mm | |
| Width | 6.2 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 390mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 90W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Height 2.4mm | ||
Width 6.2 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Related links
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 STP10NK60ZFP
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 STW10NK60Z
- ROHM R60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 R6010YND3TL1
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252