Vishay SiR180ADP Type N-Channel MOSFET, 137 A, 60 V Enhancement, 8-Pin SO-8 SiR180ADP-T1-RE3

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Subtotal (1 pack of 5 units)*

PHP520.60

(exc. VAT)

PHP583.05

(inc. VAT)

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  • Final 1,125 unit(s), ready to ship from another location
Units
Per Unit
Per Pack*
5 - 5PHP104.12PHP520.60
10 - 95PHP96.83PHP484.15
100 - 495PHP87.144PHP435.72
500 - 995PHP78.432PHP392.16
1000 +PHP70.588PHP352.94

*price indicative

Packaging Options:
RS Stock No.:
210-5001
Mfr. Part No.:
SiR180ADP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

137A

Maximum Drain Source Voltage Vds

60V

Series

SiR180ADP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.8mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

46.2nC

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

83.3W

Maximum Operating Temperature

150°C

Height

1.12mm

Width

5.26 mm

Standards/Approvals

No

Length

6.25mm

Automotive Standard

No

The Vishay N-Channel 60 V (D-S) MOSFET has PowerPAK SO-8 package type.

TrenchFET Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

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