Vishay E Type N-Channel MOSFET, 7 A, 800 V Enhancement, 3-Pin TO-220 SIHA17N80AE-GE3

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Subtotal (1 pack of 5 units)*

PHP642.88

(exc. VAT)

PHP720.025

(inc. VAT)

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Last RS stock
  • Final 975 unit(s), ready to ship from another location
Units
Per Unit
Per Pack*
5 - 5PHP128.576PHP642.88
10 - 95PHP115.718PHP578.59
100 - 495PHP104.146PHP520.73
500 - 995PHP93.732PHP468.66
1000 +PHP84.358PHP421.79

*price indicative

Packaging Options:
RS Stock No.:
210-4961
Mfr. Part No.:
SIHA17N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

800V

Series

E

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

62nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

34W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

28.1mm

Height

4.3mm

Width

9.7 mm

Automotive Standard

No

The Vishay E Series Power MOSFET has Thin-Lead TO-220 FULLPAK package type with 7 A drain current.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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