Toshiba TK099V65Z Type N-Channel MOSFET, 30 A, 650 V Enhancement, 5-Pin DFN

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Subtotal 50 units (supplied on a continuous strip)*

PHP10,539.75

(exc. VAT)

PHP11,804.50

(inc. VAT)

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Units
Per Unit
50 - 98PHP210.795
100 - 248PHP189.455
250 - 998PHP172.335
1000 +PHP168.955

*price indicative

Packaging Options:
RS Stock No.:
206-9730P
Mfr. Part No.:
TK099V65Z,LQ(S
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

650V

Package Type

DFN

Series

TK099V65Z

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

47nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

230W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.7V

Maximum Operating Temperature

150°C

Height

0.5mm

Length

8mm

Width

8 mm

Standards/Approvals

No

Automotive Standard

No

The Toshiba silicon N-channel MOSFET having high-speed switching properties with lower capacitance. It is mainly used in switching power supplies.

Low drain-source on-resistance 0.08 ?

Storage temperature -55 to 150°C