STMicroelectronics DM6 Type N-Channel MOSFET, 33 A, 650 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 204-3947
- Mfr. Part No.:
- STW50N65DM6
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 30 units)*
PHP12,308.37
(exc. VAT)
PHP13,785.36
(inc. VAT)
FREE delivery for orders over ₱3,000.00
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- Shipping from June 08, 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 90 | PHP410.279 | PHP12,308.37 |
| 120 - 240 | PHP402.074 | PHP12,062.22 |
| 270 - 480 | PHP394.033 | PHP11,820.99 |
| 510 - 990 | PHP386.152 | PHP11,584.56 |
| 1020 + | PHP378.429 | PHP11,352.87 |
*price indicative
- RS Stock No.:
- 204-3947
- Mfr. Part No.:
- STW50N65DM6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | DM6 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 91mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 52.5nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 250W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.15mm | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Length | 15.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series DM6 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 91mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 52.5nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 250W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 20.15mm | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Length 15.75mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
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