STMicroelectronics SCTH35 SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H2PAK-7 SCTH35N65G2V-7

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
201-0890
Mfr. Part No.:
SCTH35N65G2V-7
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Package Type

H2PAK-7

Series

SCTH35

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.055 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Transistor Material

SiC

Number of Elements per Chip

1

The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 45A and drain to source resistance 55m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode
Low capacitance

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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