STMicroelectronics SCTW35 N-Channel MOSFET, 45 A, 650 V Enhancement, 3-Pin Hip-247 SCTW35N65G2V

View all MOSFETs
Bulk discount available
View bulk pricing options

Subtotal 5 units (supplied in a tube)*

PHP5,622.40

(exc. VAT)

PHP6,297.10

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 843 unit(s), ready to ship from another location

Units
Per Unit
5 - 9PHP1,124.48
10 +PHP1,055.44

*price indicative

Packaging Options:
RS Stock No.:
201-0860P
Mfr. Part No.:
SCTW35N65G2V
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

650V

Package Type

Hip-247

Series

SCTW35

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

73nC

Maximum Power Dissipation Pd

240W

Maximum Gate Source Voltage Vgs

22V

Maximum Operating Temperature

200°C

Width

5.15mm

Length

14.8mm

Height

15.75mm

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 45A and drain to source resistance 45m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode

Low capacitance

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy