onsemi N-Channel MOSFET, 98 A, 1200 V Enhancement, 7-Pin TO-263 NVBG020N120SC1
- RS Stock No.:
- 195-8970
- Mfr. Part No.:
- NVBG020N120SC1
- Manufacturer:
- onsemi
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 195-8970
- Mfr. Part No.:
- NVBG020N120SC1
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 98A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.028Ω | |
| Channel Mode | Enhancement | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 98A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.028Ω | ||
Channel Mode Enhancement | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200V, M1, D2PAK−7L
The On Semiconductor single N-channel silicon carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and Compact chip size ensure low capacitance and gate charge. It include highest efficiency, Faster operation frequency, increased power density, reduced EMI, and reduced system size.
Ultra low gate charge (typ. QG(tot) = 220nC)
Low effective output capacitance
100% avalanche tested
Qualified according to AEC−Q101
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