Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	98 A
	Maximum Drain Source Voltage	1200 V
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	7
	Maximum Drain Source Resistance	0.028 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4.3V
	Transistor Material	SiC
	Number of Elements per Chip	1

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 98 A
	Maximum Drain Source Voltage 1200 V
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 7
	Maximum Drain Source Resistance 0.028 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4.3V
	Transistor Material SiC
	Number of Elements per Chip 1

NVBG020N120SC1- Datasheet

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200V, M1, D2PAK−7L

The On Semiconductor single N-channel silicon carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. It include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Ultra low gate charge (typ. QG(tot) = 220nC)
Low effective output capacitance
100% avalanche tested
Qualified according to AEC−Q101

onsemi SiC N-Channel MOSFET, 98 A, 1200 V, 7-Pin D2PAK NVBG020N120SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200V, M1, D2PAK−7L

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

Related links