onsemi NTMYS2D4N04C Type N-Channel MOSFET, 138 A, 40 V Enhancement, 4-Pin LFPAK NTMYS2D4N04CTWG
- RS Stock No.:
- 195-2511
- Mfr. Part No.:
- NTMYS2D4N04CTWG
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP3,065.44
(exc. VAT)
PHP3,433.30
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 3,000 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 80 | PHP153.272 | PHP3,065.44 |
| 100 - 480 | PHP139.347 | PHP2,786.94 |
| 500 - 980 | PHP134.379 | PHP2,687.58 |
| 1000 - 1480 | PHP132.657 | PHP2,653.14 |
| 1500 + | PHP130.98 | PHP2,619.60 |
*price indicative
- RS Stock No.:
- 195-2511
- Mfr. Part No.:
- NTMYS2D4N04CTWG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 138A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NTMYS2D4N04C | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 1.15mm | |
| Length | 5mm | |
| Width | 4.25 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 138A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NTMYS2D4N04C | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 1.15mm | ||
Length 5mm | ||
Width 4.25 mm | ||
Automotive Standard No | ||
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free
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