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Select all	Attribute	Value
	Brand	STMicroelectronics
	Channel Type	Type N, Type N
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Mount Type	Surface, Through Hole, Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	190Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	35.5nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	160W
	Forward Voltage Vf	1.6V
	Transistor Configuration	Single
	Maximum Operating Temperature	150°C
	Length	10.4mm
	Height	15.75mm
	Standards/Approvals	FCC Part 68, RoHS, TIA-1096-A
	Number of Elements per Chip	1
	Automotive Standard	No

	Select all
	Brand STMicroelectronics
	Channel Type Type N, Type N
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Mount Type Surface, Through Hole, Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 190Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 35.5nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 160W
	Forward Voltage Vf 1.6V
	Transistor Configuration Single
	Maximum Operating Temperature 150°C
	Length 10.4mm
	Height 15.75mm
	Standards/Approvals FCC Part 68, RoHS, TIA-1096-A
	Number of Elements per Chip 1
	Automotive Standard No

COO (Country of Origin):: CN

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and Ideal for bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

Extremely high dv/dt ruggedness

Zener-protected

STMicroelectronics Single 1 Type N, Type N-Channel, 25 A, 650 V Enhancement, 3-Pin TO-220 STP26N65DM2

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