STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

PHP9,172.80

(exc. VAT)

PHP10,273.55

(inc. VAT)

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Units
Per Unit
Per Tube*
50 - 50PHP183.456PHP9,172.80
100 - 200PHP177.952PHP8,897.60
250 - 450PHP172.614PHP8,630.70
500 - 950PHP167.435PHP8,371.75
1000 +PHP162.412PHP8,120.60

*price indicative

RS Stock No.:
192-4661
Mfr. Part No.:
STP26N60DM6
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

15A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

195mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

110W

Typical Gate Charge Qg @ Vgs

24nC

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

4.6 mm

Height

15.75mm

Length

10.4mm

Automotive Standard

No

COO (Country of Origin):
CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

Extremely high dv/dt ruggedness

Zener-protected

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