Wolfspeed C3M Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin TO-263
- RS Stock No.:
- 192-3511
- Mfr. Part No.:
- C3M0075120J
- Manufacturer:
- Wolfspeed
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- Plus 89 unit(s) shipping from January 01, 2026
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Units | Per Unit |
|---|---|
| 1 + | PHP1,106.22 |
*price indicative
- RS Stock No.:
- 192-3511
- Mfr. Part No.:
- C3M0075120J
- Manufacturer:
- Wolfspeed
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Wolfspeed | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | C3M | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.5V | |
| Maximum Gate Source Voltage Vgs | 19 V | |
| Maximum Power Dissipation Pd | 113.6W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.23mm | |
| Height | 4.57mm | |
| Width | 9.12 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Wolfspeed | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series C3M | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.5V | ||
Maximum Gate Source Voltage Vgs 19 V | ||
Maximum Power Dissipation Pd 113.6W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.23mm | ||
Height 4.57mm | ||
Width 9.12 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers.
Minimum of 1200V Vbr across entire operating temperature range
New low-impedance package with driver source
> 7mm of creepage/clearance between drain and source
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
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