P-Channel MOSFET, 16.2 A, 150 V, 8-Pin PowerPAK 1212-8S Vishay SISS73DN-T1-GE3
- RS Stock No.:
- 188-4940P
- Mfr. Part No.:
- SISS73DN-T1-GE3
- Manufacturer:
- Vishay
Subtotal (5 reels of 10 units)**. Quantities below 150 on continuous strip
PHP3,155.60
(exc. VAT)
PHP3,534.25
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit |
---|---|
50 - 90 | PHP61.218 |
100 - 490 | PHP57.545 |
500 - 990 | PHP52.366 |
1000 + | PHP46.083 |
**price indicative
- RS Stock No.:
- 188-4940P
- Mfr. Part No.:
- SISS73DN-T1-GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
---|---|---|
Manufacturer | Vishay | |
Channel Type | P | |
Maximum Continuous Drain Current | 16.2 A | |
Maximum Drain Source Voltage | 150 V | |
Package Type | PowerPAK 1212-8S | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 125 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 65.8 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±20 V | |
Number of Elements per Chip | 1 | |
Width | 3.3mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 14.6 nC @ 10 V | |
Length | 3.3mm | |
Height | 0.78mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Manufacturer Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 16.2 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type PowerPAK 1212-8S | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 125 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 65.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Width 3.3mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 14.6 nC @ 10 V | ||
Length 3.3mm | ||
Height 0.78mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||